BC846AWT1 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

MFG CO.

BC846AWT1

General Purpose Transistors

ON Semiconductor 

BC846AWT1 Series, BC847AWT1 Series, BC848AWT1 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min

Typ

Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 10 µA, VCE = 5.0 V)

BC846A, BC847A, BC848A

BC846B, BC847B, BC848B

BC847C, BC848C

hFE

—

90

—

—

—

150

—

—

270

—

(IC = 2.0 mA, VCE = 5.0 V)

BC846A, BC847A, BC848A

BC846B, BC847B, BC848B

BC847C, BC848C

110

180

220

200

290

450

420

520

800

Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

SMALL–SIGNAL CHARACTERISTICS

VCE(sat) —

—

VBE(sat) —

—

VBE(on) 580

—

—

0.25

V

—

0.6

0.7

—

V

0.9

—

660

700

mV

—

770

Current–Gain — Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

—

—

MHz

Output Capacitance (VCB = 10 V, f = 1.0 MHz)

Cobo

—

—

4.5

pF

Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

NF

—

—

10

dB

Figure 1.

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