BC559, B, C BC560C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
hFE
(IC = –10 µAdc, VCE = –5.0 Vdc)
BC559B
BC559C/560C
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
BC559B
BC559C/560C
BC559
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = see note 1)
(IC = –100 mAdc, IB = –5.0 mAdc, see note 2)
Base–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –5.0 mAdc)
VCE(sat)
VBE(sat)
Base–Emitter On Voltage
(IC = –10 µAdc, VCE = –5.0 Vdc)
(IC = –100 µAdc, VCE = –5.0 Vdc)
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
VBE(on)
Current – Gain — Bandwidth Product
fT
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Ccbo
Small–Signal Current Gain
hfe
(IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) BC559B
BC559C/BC560C
Noise Figure
(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)
NF1
(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz, ∆f = 200 kHz)
NF2
NOTES:
1. IB is value for which IC = –11 mA at VCE = –1.0 V.
2. Pulse test = 300 µs – Duty cycle = 2%.
Min
100
100
180
380
120
—
—
—
—
—
—
–0.55
—
—
240
450
—
—
Typ
150
270
290
500
—
–0.075
–0.3
–0.25
–1.1
–0.52
–0.55
–0.62
250
2.5
330
600
0.5
—
Max
—
—
460
800
800
–0.25
–0.6
—
—
—
—
–0.7
—
—
500
900
2.0
10
Unit
—
Vdc
Vdc
Vdc
MHz
pF
—
dB
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data