Philips Semiconductors
General purpose controlled avalanche
(double) diodes
Product specification
BAS29; BAS31; BAS35
102
handbook, halfpage
IR
(µA)
10
1
(1)
(2)
MBH282
10−1
10−2
0
100
Tj (oC)
200
(1) VR = 90 V; maximum values.
(2) VR = 90 V; typical values.
Fig.5 Reverse current as a function of
junction temperature.
handbook,4h0alfpage
Cd
(pF)
30
MGD003
20
10
0
0
10
20
30
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
RS = 50 Ω
V = VR IF x R S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R i = 50 Ω
VR
MGA881
tr
tp
10%
90%
input signal
t
IF
t rr
t
(1)
output signal
(1) IR = 3 mA.
1999 May 21
Fig.7 Reverse recovery voltage test circuit and waveforms.
6