2SD1583-ZL View Datasheet(PDF) - Renesas Electronics
Part Name
Description
MFG CO.
2SD1583-ZL Datasheet PDF : 6 Pages
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DATA SHEET
SILICON POWER TRANSISTOR
2SD1583-Z
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
<R>
The 2SD1583-Z is designed for Audio Frequency Amplifier and
Switching, especially in Hybrid Integrated Circuits.
FEATURES
• High hFE: hFE = 800 to 3200
• Low VCE(sat): VCE(sat) = 0.18 V TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
20
V
Base to Emitter Voltage
VEBO
5
V
Collector Current (DC)
IC(DC)
2
A
Collector Current (pulse) Note 1
IC(pulse)
3
A
Total Power Dissipation (TA = 25°C) Note 2
PT
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
PACKAGE DRAWING (Unit: mm)
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
4
Note
2.3 ±0.2
0.5 ±0.1
Note
123
2.3 ±0.3
0.5 ±0.1
2.3 ±0.3
0.5 ±0.1
0.15 ±0.15
TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18289EJ3V0DS00 (3rd edition)
(Previous No. TC-1671A)
Date Published July 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1985, 2006
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