2SC4603R View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2SC4603R Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4603R
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min.)
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
10
V
IC
Collector Current-Continuous
3
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
1
A
80
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.5 ℃/W
isc Website：www.iscsemi.cn
Share Link: 