2SC4027 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
2SC4027 Datasheet PDF : 5 Pages
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2SC4027
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
180
V
Collector to Emitter Voltage
VCEO
160
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
1.5
A
Collector Current (Pulse)
ICP
2.5
A
TO-220
TA=25°C TO-252
Collector Dissipation
TO-220
PC
TC=25°C TO-252
2
W
1
65
W
15
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
CLASSIFICATION OF hFE1
SYMBOL
TEST CONDITIONS
BVCBO IC=10A, IE=0
BVCEO IC =1mA, RBE=∞
BVEBO IE=10μA, IC =0
VCE(SAT) IC =500mA, IB=50mA
VBE(SAT) IC =500mA, IB=50mA
ICBO VCB=120V, IE=0
IEBO VEB=4V, I IC =0
hFE1 VCE=5V, IC =100mA
hFE2 VCE=5V, IC =10mA
fT
VCE=10V, IC =50mA
COB VCB=-10V, f=1MHz
TON See specified Test Circuit
TSTG
tF
MIN TYP MAX UNIT
180
V
160
V
6
V
0.13 0.45 V
0.85 1.2 V
1.0 μA
1.0 μA
100
400
80
120
MHz
12
pF
60
μs
1.2
μs
80
μs
RANK
RANGE
R
100~200
S
140~280
T
200~400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R209-018.C
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