2N6029 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

MFG CO.

2N6029

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2N6029 2N6030

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6029

2N6030

IC=-0.2A ;IB=0

-100

-120

VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-1A

VCEsat-2 Collector-emitter saturation voltage IC=-16A ;IB=-4A

VBEsat Base-emitter saturation voltage

IC=-10A; IB=-1A

VBE

Base-emitter on voltage

IC=-8A ; VCE=-2V

ICBO

Collector cut-off current

VCB=ratedVCBO; IE=0

2N6029 VCE=-50V; IB=0

ICEO

Collector cut-off current

2N6030 VCE=-60V; IB=0

ICEV

Collector cut-off current

(VBE(off)=1.5V)

VCE=ratedVCB

VCE=ratedVCB; TC=150

IEBO

Emitter cut-off current

VEB=-7V; IC=0

2N6029

25

hFE-1

DC current gain

IC=-8A ; VCE=-2V

2N6030

20

hFE-2

COB

fT

DC current gain

Output capacitance

Transition frequency

IC=-16A ; VCE=-2V

4

IE=0 ; VCB=-10V ;f=0.1MHz

IC=-1A ; VCE=-20V;f=0.5MHz 1.0

TYP.

MAX UNIT

V

-1.0

V

-2.0

V

-1.8

V

-1.5

V

-1.0

mA

-1.0

mA

-1.0

mA

-5.0

-1.0

mA

100

80

1000

pF

MHz

2

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