2N3772 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
2N3772 Datasheet PDF : 3 Pages
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2N3772
SILICON NPN TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
Collector-Emitter Voltage
VCEV
80
V
Collector Current
IC
30
A
Collector Peak Current (Note 1)
ICM
30
A
Base Current
IB
5
A
Base Peak Current (Note 1)
IBM
15
A
Power Dissipation (TA=25℃)
PD
150
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note 1. Pulse Test: PW<=300μs, Duty Cycle<=2%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
VCEX(SUS) IC=0.2A,VBE(OFF)=1.5V,RBE=100Ω
Collector-Emitter Sustaining Voltage VCER(SUS) IC=0.2A, RBE=100Ω
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=0.2A, IB=0
Collector Cut-off Current
ICEO VCE=50V,IB=0
Collector Cut-off Current
ICEX
VCE=100V, VBE(OFF)=1.5V.
VCE=30V, VBE(OFF)=1.5V, TA=150℃
Collector Cut-off Current
ICBO VCE=50V, IE=0
Emitter Cut-off Current
IEBO VBE=7V, IC=0
ON CHARACTERISTICS
DC Current Gain (Note)
hFE
IC=10A,VCE=4V
IC=20A, VCE=4V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=10A, IB=1.5A
IC=20A, IB=4A
Base-Emitter On Voltage
VBE(ON) IC=10A, VCE=4V
SECOND BREAKDOWN
Second Breakdown Collector with Base
Forward Biased
IS/b VCE=60V, T=1.0s, Non-repetitive
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
fT
Small-Signal Current Gain
hFE
Note: Pulse Test: PW<=300μs, Duty Cycle<=2%
IC=1A, VCE=4V, f=50kHz
IC=1A, VCE=4V, f=1kHz
MIN TYP MAX UNIT
80
V
70
V
60
V
10 mA
5
mA
10
5 mA
5 mA
15
60
5
1.4 V
4.0
2.2 V
2.5
A
0.2
MHz
40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R205-002,Ba
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