2N60G_11 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
2N60G_11 Datasheet PDF : 6 Pages
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UNISONIC TECHNOLOGIES CO., LTD
2N60
Power MOSFET
2 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 5Ω@VGS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
1
1
TO-220
TO-220F
1
1
TO-220F1
TO-262
1
TO-251
1
TO-252
1
1
TO-126
TO-251L
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N60L-x-TA3-T
2N60G-x-TA3-T
2N60L-x-TF1-T
2N60G-x-TF1-T
2N60L-x-TF3-T
2N60G-x-TF3-T
2N60L-x-TM3-T
2N60G-x-TM3-T
2N60L-x-TMA-T
2N60G-x-TMA-T
2N60L-x-TN3-R
2N60G-x-TN3-R
2N60L-x-T2Q-T
2N60G-x-T2Q-T
2N60L-x-T60-K
2N60G-x-T60-K
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-251L
TO-252
TO-262
TO-126
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
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www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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