HEF40106BTT,118 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
HEF40106BTT,118 Datasheet PDF : 16 Pages
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NXP Semiconductors
HEF40106B
Hex inverting Schmitt trigger
9. Recommended operating conditions
Table 5.
Symbol
VDD
VI
Tamb
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
ambient temperature
in free air
10. Static characteristics
Min
Max
Unit
3
15
V
0
VDD
V
40
+125
C
Table 6. Static characteristics
VSS = 0 V; VI = VSS or VDD; unless otherwise specified.
Symbol Parameter
Conditions VDD Tamb = 40 C Tamb = +25 C Tamb = +85 C Tamb = +125 C Unit
Min Max Min Max Min Max Min Max
VOH
HIGH-level
IO < 1 A
output voltage
5 V 4.95 - 4.95 - 4.95 - 4.95
10 V 9.95 - 9.95 - 9.95 - 9.95
-V
-V
15 V 14.95 - 14.95 - 14.95 - 14.95 - V
VOL
LOW-level
IO < 1 A
5V
output voltage
10 V
- 0.05 - 0.05 - 0.05 -
- 0.05 - 0.05 - 0.05 -
0.05 V
0.05 V
15 V
- 0.05 - 0.05 - 0.05 -
0.05 V
IOH
HIGH-level
VO = 2.5 V
5V
- 1.7 - 1.4 - 1.1 -
1.1 mA
output current VO = 4.6 V
5V
- 0.64 - 0.5 - 0.36 - 0.36 mA
VO = 9.5 V 10 V
- 1.6 - 1.3 - 0.9 -
0.9 mA
VO = 13.5 V 15 V
- 4.2 - 3.4 - 2.4 -
2.4 mA
IOL
LOW-level
VO = 0.4 V
5 V 0.64 -
0.5
- 0.36 - 0.36
- mA
output current VO = 0.5 V
10 V
1.6
-
1.3
-
0.9
-
0.9
- mA
VO = 1.5 V 15 V
4.2
-
3.4
-
2.4
-
2.4
- mA
II
input leakage
current
15 V
- 0.1 - 0.1 - 1.0 -
1.0 A
IDD
supply current all valid input 5 V
- 0.25 - 0.25 -
7.5
-
7.5 A
combinations; 10 V
IO = 0 A
15 V
-
0.5
-
0.5
- 15.0
-
15.0 A
-
1.0
-
1.0
- 30.0
-
30.0 A
CI
input
capacitance
-
-
-
7.5
-
-
-
- pF
HEF40106B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 23 August 2011
© NXP B.V. 2011. All rights reserved.
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