NXP Semiconductors
PMBD7000
Double high-speed switching diode
102
IFSM
(A)
10
1
mbg704
105
IR
(nA)
104
103
(1)
(2)
(3)
102
mbg378
10−1
1
10
102
103
104
tp (μs)
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 3. Non-repetitive peak forward current as a
function of pulse duration; maximum values
0.8
Cd
(pF)
0.6
10
0
100
Tj (°C)
200
(1) VR = 50 V; maximum values
(2) VR = 30 V; typical values
(3) VR = 50 V; typical values
Fig 4. Reverse current as a function of junction
temperature
mbg446
0.4
0.2
0
0
4
8
12 VR (V) 16
f = 1 MHz; Tamb = 25 °C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
PMBD7000
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 16 September 2010
© NXP B.V. 2010. All rights reserved.
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