SI9926DY View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
SI9926DY Datasheet PDF : 5 Pages
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January 2001
Si9926DY
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
These N-Channel 2.5V specified MOSFETs use
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 10V).
Applications
• Battery protection
• Load switch
• Power management
Features
• 6.5 A, 20 V.
RDS(ON) = 0.030 Ω @ VGS = 4.5 V
RDS(ON) = 0.043 Ω @ VGS = 2.5 V.
• Optimized for use in battery protection circuits
• ±10 VGSS allows for wide operating voltage range
• Low gate charge
D1
D1
D2
D2
SO-8
G1
S1
G2
S2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
9926
Si9926DY
13’’
5
6
Q1
7
Q2
8
Ratings
20
±10
6.5
20
2
1.6
1
0.9
-55 to +150
78
40
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor International
Si9926DY Rev A (W)
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