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BYG22DHE3/TR3 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
MFG CO.
BYG22DHE3/TR3
Vishay
Vishay Semiconductors 
BYG22DHE3/TR3 Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
BYG22A, BYG22B, BYG22D
Vishay General Semiconductor
Ultrafast Avalanche SMD Rectifier
DO-214AC (SMA)
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Low forward voltage
• Soft recovery characteristic
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
IR
VF at IF
trr
ER
TJ max.
Package
2.0 A
50 V, 100 V, 200 V
35 A
1.0 μA
1.1 V
25 ns
20 mJ
150 °C
DO-214AC (SMA)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYG22A
Device marking code
BYG22A
Maximum repetitive peak reverse voltage
VRRM
50
Average forward current
IF(AV)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
ER
I(BR)R = 1 A, TJ = 25 °C
Operating junction and storage temperature range TJ, TSTG
BYG22B
BYG22B
100
2.0
35
20
-55 to +150
BYG22D
BYG22D
200
UNIT
V
A
A
mJ
°C
Revision: 30-Oct-13
1
Document Number: 88959
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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