BSP135H6906XTSA1 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
MFG CO.
BSP135H6906XTSA1 Datasheet PDF : 9 Pages
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13 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
100
10-1
150 °C
25 °C
150 °C, 98%
25 °C, 98%
15 Typ. gate charge
V GS=f(Q gate); I D=0.1 A pulsed
parameter: V DD
8
0.2 VDS(max)
6
BSP135
0.5 VDS(max)
0.8 VDS(max)
4
2
10-2
0
-2
10-3
0
0.5
1
1.5
2
VSD [V]
16 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=250 µA
-4
0
1
2
3
4
5
Qgate [nC]
700
660
620
580
540
500
-60 -20
20
60 100 140 180
Tj [°C]
Rev. 1.33
page 7
2012-11-29
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