SMP80MC-200(2005) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

SMP80MC-200
(Rev.:2005)

TRISIL™ FOR TELECOM EQUIPMENT PROTECTION

STMicroelectronics 

SMP80MC

Figure 11: Test circuit 2 for IBO and VBO parameters

K

ton = 20ms

220V 50Hz

Vout

R1 = 140Ω

R2 = 240Ω

DUT

1/4

IBO

measurement

VBO

measurement

TEST PROCEDURE

Pulse test duration (tp = 20ms):

● for Bidirectional devices = Switch K is closed

● for Unidirectional devices = Switch K is open

VOUT selection:

● Device with VBO < 200V ➔ VOUT = 250 VRMS, R1 = 140Ω

● Device with VBO ≥ 200V ➔ VOUT = 480 VRMS, R2 = 240Ω

Figure 12: Test circuit 3 for dynamic IH parameter

R

VBAT = - 48 V

D.U.T

Surge

generator

This is a GO-NOGO test which allows to confirm the holding current (IH) level in a

functional test circuit.

TEST PROCEDURE

1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T.

2/ Fire the D.U.T. with a surge current ➔ IPP = 10A, 10/1000µs.

3/ The D.U.T. will come back off-state within 50ms maximum.

6/9

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