STF26NM60N-H View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STF26NM60N-H Datasheet PDF : 12 Pages
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Electrical characteristics
2
Electrical characteristics
STF26NM60N-H
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 1 mA, VGS = 0
VDS = Max rating
VDS = Max rating, @125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 10 A
600
V
1 µA
10 µA
0.1 µA
23
4V
0.135 0.165 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Coss eq. (1)
Equivalent output
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Rg Gate input resistance
VDS = 50 V, f = 1 MHz,
VGS = 0
VGS = 0, VDS = 0 to 480 V
VDD = 480 V, ID = 20 A,
VGS = 10 V,
(see Figure 15)
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
1800
pF
- 115 - pF
1.1
pF
- 310 - pF
60
nC
- 8.5 - nC
30
nC
- 2.8 - Ω
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
4/12
Doc ID 16964 Rev 1
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