ZXM62N03GTA(2002) View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

MFG CO.

ZXM62N03GTA
(Rev.:2002)

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZXM62N03G

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

30

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

1.0

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

gfs

1.1

DYNAMIC (3)

1

100

0.11

0.15

V

ID=250µA, VGS=0V

␮A VDS=30V, VGS=0V

nA

VGS=Ϯ20V, VDS=0V

V

ID=250␮A, VDS= VGS

⍀

VGS=10V, ID=2.2A

⍀

VGS=4.5V, ID=1.1A

S

VDS=15V,ID=1.1A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

380

pF

VDS=25V, VGS=0V,

90

pF f=1MHz

30

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

2.9

5.6

11.7

6.4

9.6

1.7

2.8

ns

ns

VDD =15V, ID=2.2A

ns

RG=6.0⍀, VGS=10V

ns

nC

nC

VDS=24V,VGS=10V,

ID=2.2A

nC

Diode Forward Voltage (1)

VSD

Reverse Recovery Time (3)

trr

Reverse Recovery Charge (3)

Qrr

0.95 V

TJ=25ЊC, IS=2.2A,

VGS=0V

18.8

11.4

ns TJ=25ЊC, IF=2.2A,

di/dt= 100A/␮s

nC

NOTES

(1) Measured under pulsed conditions. Width=300␮s. Duty cycle Յ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 1 - OCTOBER 2002

4

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