) P-Channel
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
150
100
VGS = −2.5 V
−4.0 V
−4.5 V
50
0
-50
P ulsed
0
50
100
150
Tch - Channel Temperature - °C
1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C is s
100
Coss
VGS = 0 V
f = 1 MHz
10
- 0.1
-1
C rss
- 10
- 100
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
- 0.1
di/dt = 10 A/µs
VGS = 0 V
-1
- 10
IF - Diode Forward Current - A
- 100
µPA1793
- 100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
- 10
-1
- 0.1
VGS = −4.5 V
0V
- 0.01
0
Pulsed
0.5
1
VF(S-D) - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
10000
1000
td(off)
VDD = -10 V
VGS = −4 V
RG = 10 Ω
100
tf
tr
td(on)
10
- 0.1
-1
- 10
ID - Drain Current - A
- 100
DYNAMIC INPUT/OUTPUT CHARACTERITICS
- 20
-5
VDD = 16 V
ID = 3 A
- 16
10 V
-4
4V
- 12
-8
-3
VGS
-2
-4
0
0
VDS
1
2
3
QG - Gate Charge - nC
-1
0
4
10
DataSheet G16059EJ1V0DS