UNR911xJ Series
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Emitter-base resistance UNR911CJ
Resistance UNR911MJ
ratio
UNR911NJ
R2
R1/R2
UNR9118J/9119J
UNR9114J
UNR911HJ
UNR911TJ
UNR911FJ
UNR911AJ/911VJ
UNR9111J/9112J/9113J/911LJ
UNR911EJ
UNR911DJ
Min Typ Max Unit
−30% 47 +30% kΩ
0.047
0.1
0.08 0.10 0.12
0.17 0.21 0.25
0.17 0.22 0.27
0.47
0.37 0.47 0.57
1.0
0.8 1.0 1.2
1.70 2.14 2.60
3.7 4.7 5.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
150
125
100
75
50
25
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR9110J
IC VCE
−120
IB = −1.0 mA
Ta = 25°C
−102
− 0.9 mA
−100
− 0.8 mA
− 0.7 mA
− 0.6 mA
−10
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
VCE(sat) IC
IC / IB = 10
−60
−1
− 0.2 mA
−40
25°C
Ta = 75°C
− 0.1 mA
−10 −1
−20
−25°C
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
−10 −2
−10 −1
−1
−10
−102
Collector current IC (mA)
hFE IC
400
VCE = –10 V
300
Ta = 75°C
200
25°C
−25°C
100
0
−1
−10
−102
−103
Collector current IC (mA)
SJH00038BED
3