TSOP-6 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
TSOP-6 Datasheet PDF : 11 Pages
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www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.8
100
ID = 5.1 A
VGS = 2.5 V
10
1.5
1
1.2
VGS = 4.5 V
0.1
0.9
0.01
SQ3460EV
Vishay Siliconix
TJ = 150 °C
TJ = 25 °C
0.6
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.25
0.20
0.15
0.10
0.05
TJ = 150 °C
0.00
TJ = 25 °C
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
35
ID = 1 mA
33
0.3
0.1
- 0.1
- 0.3
- 0.5
ID = 5 mA
ID = 250 μA
- 0.7
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
31
29
27
25
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2359-Rev. D, 05-Dec-11
4
Document Number: 67037
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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