TK10A60W View Datasheet(PDF) - Toshiba
Part Name
Description
MFG CO.
TK10A60W Datasheet PDF : 10 Pages
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TK10A60W
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Isolation voltage (RMS)
Mounting torque
(Tc = 25)
(t = 1.0 s)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
VISO(RMS)
TOR
600
±30
9.7
38.8
30
134
2.5
9.7
38.8
150
-55 to 150
2000
0.6
V
A
W
mJ
A
V
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 37.6 mH, RG = 25 Ω, IAR = 2.5 A
Symbol
Rth(ch-c)
Rth(ch-a)
Max
Unit
4.17
/W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2012-08-27
Rev.2.0
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