T1635H-600TRG View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
T1635H-600TRG Datasheet PDF : 10 Pages
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Characteristics
T1635H Series
Figure 3. RMS on-state current vs ambient Figure 4. Relative variation of thermal
temperature, PCB FR4, eCU = 35 µm
impedance vs pulse duration
IT(RMS) (A)
4.5
4.0
3.5
α=180 °
D²PAK
SCU=1 cm²
K=[Zth/Rth]
1.E+00
Zth(j-c)
3.0
1.E-01
Zth(j-a)
2.5
2.0
1.5
1.E-02
1.0
0.5
0.0
0
Tamb(°C)
tP(s)
1.E-03
25
50
75
100
125
150
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
1.E+03
Figure 5.
Relative variation of gate trigger
current, holding current and
latching current vs junction
temperature (typical values)
Figure 6. Surge peak on-state current vs
number of cycles
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60
ITSM(A)
180
160
140
Non repetitive
Tj initial=25 °C
120
100
80
Repetitive
60
Tc=113 °C
40
20
0
80 100 120 140 160
1
Number of cycles
10
100
t=20ms
One cycle
1000
Figure 7.
Non repetitive surge peak
Figure 8.
on-state current (sinusoidal pulse
width tp<10 ms) and corresponding
value of I²t
ITSM(A), I²t (A²s)
10000
Tj initial=25 °C
ITM(A)
100
On-state characteristics (maximum
values)
dI/dt limitation: 50 A/µs
1000
Tj=150 °C
Tj=25 °C
10
100
0.01
tP(ms)
0.10
ITSM
I²t
1.00
Tj max. :
VT0 = 0.80 V
RD = 23 mW
VTM(V)
1
10.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4/10
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