BFX85 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BFX85 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistor
Product specification
BFX85
FEATURES
• High current (max. 1 A)
• Low voltage (max. 60 V).
APPLICATIONS
• General purpose switching and amplification
• Industrial applications.
DESCRIPTION
NPN transistor in a TO-39 metal package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpag1e
2
3
3
2
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
hFE
DC current gain
fT
transition frequency
toff
turn-off time
CONDITIONS
MIN.
open emitter
−
open base
−
−
Tamb ≤ 25 °C
−
Tcase ≤ 100 °C
−
IC = 150 mA; VCE = 10 V
70
IC = 50 mA; VCE = 10 V; f = 100 MHz
50
ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA −
TYP.
−
−
−
−
−
142
−
360
MAX.
100
60
1
800
2.86
−
−
−
UNIT
V
V
A
mW
W
MHz
ns
1997 Apr 22
2
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