SUP40N25-60(2004) View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

MFG CO.

SUP40N25-60
(Rev.:2004)

N-Channel 250-V (D-S) 175°C MOSFET

Vishay Semiconductors 

THERMAL RATINGS

New Product

SUP40N25-60

Vishay Siliconix

Maximum Avalanche and Drain Current

vs. Case Temperature

50

40

30

20

10

0

0

25 50 75 100 125 150 175

TC − Ambient Temperature (_C)

Safe Operating Area, Case Temperature

100

10 ms

*Limited

by rDS(on)

10

100 ms

1 ms

1

10 ms, 100 ms, dc

0.1

0.01

TC = 25_C

Single Pulse

0.001

0.1

1

10

100

1000

VDS − Drain-to-Source Voltage (V)

*VGS u minimum VGS at which rDS(on) is specified

2

1 Duty Cycle = 0.5

0.2

0.1

0.1

0.05

0.02

Single Pulse

Normalized Thermal Transient Impedance, Junction-to-Case

0.01

10−4

10−3

10−2

10−1

1

Square Wave Pulse Duration (sec)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and

Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?73132.

Document Number: 73132

S-42076—Rev. A, 15-Nov-04

www.vishay.com

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