SUP40N25-60(2004) View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

MFG CO.

SUP40N25-60
(Rev.:2004)

N-Channel 250-V (D-S) 175°C MOSFET

Vishay Semiconductors 

SUP40N25-60

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature

2.8

VGS = 10 V

2.4

ID = 20 A

2.0

1.6

1.2

0.8

0.4

−50 −25 0

25 50 75 100 125 150 175

TJ − Junction Temperature (_C)

Source-Drain Diode Forward Voltage

100

TJ = 150_C

10

TJ = 25_C

1

0

0.3

0.6

0.9

1.2

VSD − Source-to-Drain Voltage (V)

Avalanche Current vs. Time

100

10

IAV (A) @ TA = 25_C

1

IAV (A) @ TA = 150_C

0.1

0.00001 0.0001 0.001 0.01

0.1

1

tin (Sec)

Drain Source Breakdown vs.

Junction Temperature

300

290

ID = 1.0 mA

280

270

260

250

240

230

−50 −25 0

25 50 75 100 125 150 175

TJ − Junction Temperature (_C)

www.vishay.com

4

Document Number: 73132

S-42076—Rev. A, 15-Nov-04

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