STF26NM60N View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STF26NM60N

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

STMicroelectronics 

Electrical characteristics STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max Unit

ISD Source-drain current

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 20 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20 A, di/dt = 100 A/µs

VDD = 60 V

-

(see Figure 20)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

-

(see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

20 A

80 A

1.5 V

370

ns

5.8

µC

31.6

A

450

ns

7.5

µC

32.5

A

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Doc ID 15642 Rev 5

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