STW26NM60N View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STW26NM60N

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

STMicroelectronics 

STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Electrical characteristics

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

Symbol

On/off states

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on-

resistance

Test conditions

ID = 1 mA, VGS = 0

VDS = 600 V

VDS = 600 V, TC = 125 °C

VGS = ± 25 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 10 A

Min. Typ. Max. Unit

600

V

1 µA

100 µA

±0.1 µA

23

4

V

0.135 0.165 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

Coss eq. (1)

Equivalent output

capacitance

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

Rg Gate input resistance

VDS = 50 V, f = 1 MHz,

VGS = 0

VGS = 0, VDS = 0 to 480 V

VDD = 480 V, ID = 20 A,

VGS = 10 V,

(see Figure 19)

f=1 MHz Gate DC Bias=0

Test signal level = 20 mV

open drain

1800

pF

- 115 - pF

1.1

pF

- 310 - pF

60

nC

- 8.5 - nC

30

nC

- 2.8 - Ω

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 300 V, ID = 10 A

RG = 4.7 Ω VGS = 10 V

(see Figure 18)

Min. Typ. Max. Unit

13

ns

25

ns

-

-

85

ns

50

ns

Doc ID 15642 Rev 5

5/23

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