STF11NM60ND(2008) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STF11NM60ND
(Rev.:2008)

, N-channel 600V - 0.37Ω - 10A - FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

STMicroelectronics 

STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

DPAK/I²PAK TO-

220/IPAK

TO-220FP

Unit

VDS Drain-source voltage (VGS=0)

VGS Gate-source voltage

ID Drain current (continuous) at TC = 25°C

ID Drain current (continuous) at TC = 100°C

IDM (2) Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

dv/dt (3) Peak diode recovery voltage slope

VISO

Tstg

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1s;TC=25°C)

Storage temperature

Tj Max. operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS

Table 3. Thermal data

600

± 25

10

6.3

40

90

40

10 (1)

6.3(1)

40 (1)

25

--

2500

-55 to 150

150

V

V

A

A

A

W

V/ns

V

°C

°C

Symbol

Parameter

Value

Unit

TO-220 I²PAK DPAK IPAK TO-220FP

Rthj-case

Thermal resistance junction-case

max

1.38

Rthj-amb Thermal resistance junction-amb max

62.5

-- 100

Rthj-pcb Thermal resistance junction-pcb max --

-- 50 --

Tl

Maximum lead temperature for

soldering purposes

300

5

°C/W

62.5 °C/W

--

°C/W

°C

Table 4. Avalanche characteristics

Symbol

Parameter

IAS Avalanche current, repetitive or not-repetitive(1)

EAS Single pulse avalanche energy (2)

1. Pulse width limited by Tj max

2. starting Tj= 25 °C, ID=IAS, VDD= 50 V

Max value

3.5

200

Unit

A

mJ

3/18

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