STTH806D View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STTH806D Datasheet PDF : 9 Pages
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STTH806
Characteristics
Figure 1. Conduction losses versus
average current
15.0 PF(AV)(W)
δ = 0.05 δ = 0.1 δ = 0.2
12.5
δ = 0.5
10.0
δ=1
7.5
5.0
T
2.5
IF(AV)(A)
δ=tp/T
tp
0.0
0
1
2
3
4
5
6
7
8
9
10
Figure 2. Forward voltage drop versus
forward current
100 IFM(A)
90
80
Tj=150°C
(maximum values)
70
60
Tj=150°C
50
(typical values)
40
Tj=25°C
30
(maximum values)
20
10
VFM(V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Peak reverse recovery current
versus dIF/dt (typical values)
1.0 Zth(j-c)/Rth(j-c)
0.9 Single pulse
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
14 IRM(A)
VR=400V
Tj=125°C
12
10
IF=0.5 x IF(AV)
IF=0.25 x IF(AV)
8
IF=IF(AV)
IF=2 x IF(AV)
6
4
2
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 5. Reverse recovery time versus
dIF/dt (typical values)
300 trr(ns)
250
200
150
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
VR=400V
Tj=125°C
100
50
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
450 Qrr(nC)
400
VR=400V
Tj=125°C
IF=2 x IF(AV)
350
300
250
IF=IF(AV)
IF=0.5 x IF(AV)
200
150
100
50
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
3/9
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