STPS20S100C View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STPS20S100C Datasheet PDF : 7 Pages
| |||
STPS20S100C
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
100
IF(RMS) RMS forward voltage
30
IF(AV)
TO-220AB /
Average forward current I2PAK
δ = 0.5
TO-220FPAC
Tc = 150°C
Tc = 140°C
Per diode
Per device
Per diode
Per device
10
20
10
20
IFSM Surge non repetitive forward current
tp = 10ms sinusoidal
180
PARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
7200
Tstg Storage temperature range
-65 to + 175
Tj Maximum operating junction temperature *
175
dV/dt Critical rate of rise of reverse voltage
10000
*:
d----P-----t--o----t
dTj
>
R-----t--h----(-1--j--–-----a----)
thermal runaway condition for a diode on its own heatsink
Unit
V
A
A
A
W
°C
°C
V/µs
Table 4: Thermal Resistance
Symbol
Parameter
Rth(j-c)
Rth(c)
Junction to case
TO-220AB / I2PAK
Rth(j-c) Junction to case
TO-220FPAB
Rth(c)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Per diode
Total
Coupling
Per diode
Total
Coupling
Value
2.2
1.3
0.3
4.5
3.5
2.5
Table 5: Static Electrical Characteristics (per diode)
Symbol
Parameter
Tests conditions
IR *
Tj = 25°C
Reverse leakage current
Tj = 125°C
VR = VRRM
Tj = 25°C
Tj = 125°C
IF = 5A
VF ** Forward voltage drop
Tj = 25°C
Tj = 125°C
IF = 10A
Tj = 25°C
Tj = 125°C
IF = 20A
Min. Typ
1.3
0.57
0.66
0.74
Pulse test:
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.62 x IF(AV) + 0.009 IF2(RMS)
Max.
3.5
4.5
0.73
0.61
0.85
0.71
0.94
0.80
Unit
°C/W
°C/W
Unit
µA
mA
V
2/7
Share Link: 