STB8NM60N View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STB8NM60N
STMicroelectronics
STB8NM60N Datasheet PDF : 19 Pages
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STx8NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220, IPAK, DPAK,
D²PAK
TO-220FP
Unit
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
Drain current (continuous) at
ID
TC = 25 °C
Drain current (continuous) at
ID
TC = 100 °C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t = 1 s;TC = 25 °C)
dv/dt (3) Peak diode recovery voltage slope
Tj Operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 7 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
600
± 25
7
7 (1)
4.3
4.3 (1)
28
28 (1)
70
25
--
2500
15
-55 to 150
V
V
A
A
A
W
V
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 IPAK DPAK D²PAK TO-220FP
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-amb
Tl
Maximum lead temperature for
soldering purpose
1.78
62.5 100 --
300
5
62.5
°C/W
°C/W
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tj max)
2.5
A
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAS, VDD = 50 V)
200
mJ
3/19
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