D8NM60N(2008_01) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

D8NM60N
(Rev.:2008_01)

N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET

STMicroelectronics 

STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

TO-220

DPAK/IPAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

VGS Gate-source voltage

ID

Drain current (continuous) at TC = 25 °C

ID

Drain current (continuous) at TC = 100 °C

IDM (2) Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

VISO

dv/dt (3)

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t = 1 s;TC = 25 °C)

Peak diode recovery voltage slope

Tj

Operating junction temperature

Tstg

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 7A, di/dt ≤ 400A/µs, VDD = 80% V(BR)DSS

600

± 25

7

7 (1)

4.3

4.3 (1)

28

28 (1)

70

25

--

2500

15

-55 to 150

Unit

V

V

A

A

A

W

V

V/ns

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case

Rthj-amb Thermal resistance junction-amb

Tl

Maximum lead temperature for soldering

purpose

Value

TO-220

DPAK/IPAK

TO-220FP

Unit

1.78

5

62.5

°C/W

°C/W

300

°C

Table 4. Avalanche characteristics

Symbol

Parameter

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj = 25 °C, ID = IAS, VDD = 50 V)

Max value

Unit

2.5

A

200

mJ

3/17

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