STP8NM50FP(2002) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STP8NM50FP
(Rev.:2002)

N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP MDmesh™ Power MOSFET

STMicroelectronics 

STP8NM50/STP8NM50FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol

Parameter

Test Conditions

td(on)

tr

Turn-on Delay Time

Rise Time

VDD = 250V, ID = 2.5A

RG = 4.7Ω VGS = 10V

(see test circuit, Figure 3)

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDD = 400V, ID = 5A,

VGS = 10V

Qgd

Gate-Drain Charge

SWITCHING OFF

Symbol

Parameter

tr(Voff)

Off-voltage Rise Time

tf

Fall Time

tc

Cross-over Time

Test Conditions

VDD = 400V, ID = 5A,

RG = 4.7Ω, VGS = 10V

(see test circuit, Figure 5)

Min. Typ. Max. Unit

16

ns

8

ns

13

nC

4

nC

6

nC

Min. Typ. Max. Unit

14

ns

6

ns

13

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

ISD

Source-drain Current

ISDM (2) Source-drain Current (pulsed)

VSD (1) Forward On Voltage

ISD = 5A, VGS = 0

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Charge

ISD = 5A, di/dt = 100A/µs,

VDD = 100 V, Tj = 25°C

(see test circuit, Figure 5)

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Charge

ISD = 5A, di/dt = 100A/µs,

VDD = 100 V, Tj = 150°C

(see test circuit, Figure 5)

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Pulse width limited by safe operating area.

Min.

Typ.

185

1.1

11.5

270

1.6

12

Max.

5

20

1.5

Safe Operating Area For TO-220

Safe Operating Area For TO-220FP

Unit

A

A

V

ns

µC

A

ns

µC

A

3/9

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