F8NK85Z View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
F8NK85Z
STMicroelectronics
F8NK85Z Datasheet PDF : 15 Pages
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STP8NK85Z - STF8NK85Z
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown voltage
ID =1MA, VGS = 0
850
V
Zero Gate voltage
IDSS Drain current (VGS = 0)
t(s) IGSS
Gate-body leakage
Current (VDS = 0)
uc VGS(th) Gate threshold voltage
Prod t(s) RDS(on)
Static drain-source on
resistance
VDS = Max Rating
VDS = Max Rating, TC = 125°C
1 µA
50 µA
VGS = ± 20 V
± 10 µA
VDS = VGS, ID = 100 µA
VGS = 10 V, ID = 3.35 A
3 3.75 4.5 V
1.1 1.4 Ω
lete uc Table 6. Dynamic
so rod Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
b P gfs (1) Forward transconductance VDS = 15v, ID = 3.35 A
6
S
- O te Ciss
) le Coss
t(s so Crss
Input capacitance
Output capacitance
VDS = 25 V, f = 1 MHz,
Reverse transfer capacitance VGS = 0
1870
pF
190
pF
44
pF
uc Ob Coss eq. (2)
Equivalent output
capacitance
VDS =0V, VDS = 0V to 680V
75
pF
rod ) - td(on)
P t(s tr
te c td(off)
le u tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 425 V, ID = 3.35 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
so rod tr(Voff)
tr
b P tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 680 V, ID = 6.7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20)
O teQg Total gate charge
le Qgs Gate-source charge
so Qgd Gate-drain charge
VDD = 680 V, ID = 6.7 A,
VGS = 10 V
(see Figure 19)
Ob 1. Pulsed: pulse duration=300µs, duty cycle 1.5%
26
ns
19
ns
58
ns
18
ns
12
ns
10
ns
24
ns
60
nC
12 84 nC
35
nC
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
5/15
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