STW40NF20 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STW40NF20

N-channel 200V - 0.038Ω-40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET™ Power MOSFET

STMicroelectronics 

STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 20A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20A,

di/dt = 100A/µs,

VDD = 25V

(see Figure 19)

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20A,

di/dt = 100A/µs,

VDD = 25V, Tj = 150°C

(see Figure 19)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

40

A

160 A

1.5 V

192

ns

922

nC

9.6

A

242

ns

1440

nC

11.9

A

5/17

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