9410A View Datasheet(PDF) - Samhop Mircroelectronics

Part Name

Description

MFG CO.

9410A

N-Channel E nhancement Mode Field Effect Transistor

Samhop Mircroelectronics 

S TM9410A

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

P a ra meter

S ymbol Condition

Min Typ C Max Unit

OFF CHARACTERISTICS

Drain-S ource Breakdown Voltage

Zero Gate Voltage Drain C urrent

Gate-Body Leakage

ON CHARACTERISTICS b

Gate Threshold Voltage

BVDSS VGS =0V, ID =250uA

30

IDSS

VDS =24V, VGS =0V

IGSS

VGS = 20V, VDS =0V

V

1 uA

100 nA

VGS(th) VDS =VGS, ID = 250uA 1 1.7 2.5 V

Drain-S ource On-S tate R esistance

R DS(ON)

VGS =10V, ID =6A

VGS = 4.5V,ID= 3A

20 28 m ohm

42 56 m ohm

On-S tate Drain Current

ID(ON) VDS = 5V, VGS = 10V

20

A

Forward Transconductance

gFS

VDS = 5V, ID =6A

8

S

DYNAMIC CHARACTERISTICS c

Input Capacitance

C IS S

Output Capacitance

COSS

R everse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS c

VDS =15V, VGS = 0V

f =1.0MHZ

630

PF

170

PF

110

PF

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

Fall Time

tD(ON)

VDD = 15V

tr

ID = 1A

tD(O F F )

VGS = 10V

R GEN = 10 ohm

tf

12.7

ns

4.1

ns

19.4

ns

12.9

ns

Total Gate C harge

VDS =15V, ID =6A,VGS =10V

13.5

nC

Qg

VDS =15V, ID =6A,VGS =4.5V

7.1

nC

Gate-S ource Charge

Gate-Drain C harge

Qgs

VDS =15V, ID = 6A

Qgd

VGS =4.5V

3

nC

2.8

nC

2

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