STGD7NB60KT4 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STGD7NB60KT4 Datasheet PDF : 14 Pages
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STGP7NB60K/STGP7NB60KFP/STGD7NB60K/STGP7NB60KD/STGB7NB60KD/STGP7NB60KDFP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES Collector-Emitter Voltage (VGS = 0)
VECR Emitter-Collector Voltage
VGE Gate-Emitter Voltage
IC
Collector Current (continuous) at TC = 25°C
IC
Collector Current (continuous) at TC = 125°C
ICM (n) Collector Current (pulsed)
If (1) Forward Current
Ifm (1) Forward Current Pulsed
PTOT Total Dissipation at TC = 25°C
Derating Factor
VISO Insulation Withstand Voltage A.C.
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(n) Pulse width limited by safe operating area
(1) For “D” version only
TO-220
D2PAK
14
7
50
95
0.64
--
Value
TO-220FP
600
20
±20
14
7
50
7
56
30
0.28
2500
– 55 to 150
150
DPAK
14
7
50
90
0.64
--
Unit
V
V
V
A
A
A
A
A
W
W/°C
V
°C
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-h
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
TO-220
D2PAK
TO-220FP
1.32
4.17
62.5
0.5
DPAK
1.4
100
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETERS
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VBR(CES) Collector-Emitter Breakdown IC = 250 µA, VGE = 0
600
V
Voltage
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
50
µA
500
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100
nA
VGE(th) Gate Threshold Voltage
VCE = VGE, IC = 250µA
5
7
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 7 A
VGE = 15V, IC = 7 A, Tc =100°C
2.3
2.8
V
1.9
V
2/14
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