STD10NM60N(2015) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STD10NM60N
(Rev.:2015)

N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

Electrical characteristics

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Symbol

Parameter

Table 5. On/off-states

Test conditions

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

ID = 1 mA, VGS = 0,

TC = 150 °C

Zero-gate voltage

VDS = 600 V

drain current (VGS = 0) VDS = 600 V, TC = 125 °C

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

Gate threshold voltage VDS = VGS, ID = 250 µA

Static drain-source on-

resistance

VGS = 10 V, ID = 4 A

Min.

600

Typ.

650

Max. Unit

V

1

µA

100

± 100 nA

2

3

4

V

0.53 0.55 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-

540

- pF

-

44

- pF

-

1.2

- pF

Equivalent

Coss

(1)

eq

capacitance time

related

VDS = 0 to 480 V, VGS = 0

-

110

- pF

Rg Gate input resistance f=1 MHz open drain

-

6

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 8 A,

Qgs Gate-source charge VGS = 10 V

Qgd Gate-drain charge

(see Figure 17)

-

19

- nC

-

3

- nC

-

10

- nC

1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS.

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DocID028726 Rev 1

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