Final data
SPI07N60S5
SPP07N60S5, SPB07N60S5
Forward characteristics of reverse diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPP07N60S5
Typ. gate charge
VGS = f (QGate)
parameter: ID = 7.3 A pulsed
SPP07N60S5
16
V
A
10 1
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
12
0,2 VDS max
0,8 VDS max
10
8
6
4
2
0
0 4 8 12 16 20 24 28 32nC 38
Qg
7
2002-07-26