SI4874BDY(2009) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
SI4874BDY Datasheet PDF : 8 Pages
| |||
Si4874BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.010
0.008
0.006
VGS = 4.5 V
VGS = 10 V
0.004
0.002
0.000
0
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current
6
5
VDS = 15 V
ID = 16 A
4
3
2
4000
3500
Ciss
3000
2500
2000
1500
1000
500
Crss
Coss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V
1.4
ID = 16 A
1.2
1.0
1
0.8
0
0
6
12
18
24
30
Qg - Total Gate Charge (nC)
Gate Charge
50
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.020
TJ = 150 °C
10
0.016
0.012
ID = 16 A
TJ = 25 °C
0.008
0.004
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 73058
S09-0540-Rev. C, 06-Apr-09
0.000
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
www.vishay.com
3
Share Link: 