SGL50N60RUFD View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
SGL50N60RUFD Datasheet PDF : 8 Pages
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April 2013
SGL50N60RUFD
600 V, 50 A Short Circuit Rated IGBT
General Description
Fairchild®’s RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• 50 A, 600 V, TC = 100°C
• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 50 A
• Typical Fall Time. . . . . . . . . .261ns at TJ = 125°C
• High Speed Switching
• High Input Impedance
• Short Circuit Rating
Applications
Motor control, UPS, General Inverter.
C
G
GC E
TO-264
Absolute Maximum Ratings TC = 25C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25C
@ TC = 100C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100C
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 100C
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
E
SGL50N60RUFD
600
20
80
50
150
30
90
10
250
100
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.5
1.0
25
Unit
V
V
A
A
A
A
A
us
W
W
C
C
C
Unit
C/W
C/W
C/W
©1999 Fairchild Semiconductor Corporation
1
SGL50N60RUFD Rev. C0
www.fairchildsemi.com
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