RN4990 View Datasheet(PDF) - Toshiba
Part Name
Description
MFG CO.
RN4990 Datasheet PDF : 6 Pages
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RN4990
TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN4990
Switching, Inverter Circuit, Interface Circuit and Driver Circuit
AEC-Q101 Qualified (Note1)
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process and miniaturize
equipment.
Note1: For detail information, please contact to our sales.
Unit: mm
Equivalent Circuit and Bias Resister Values
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
50
V
50
V
5
V
100
mA
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
−50
V
−50
V
−5
V
−100
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 6.8mg (typ.)
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1992-10
2019-11-18
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