RJP6085DPN View Datasheet(PDF) - Renesas Electronics

Part Name

Description

MFG CO.

RJP6085DPN

Silicon N Channel IGBT High Speed Power Switching

Renesas Electronics 

RJP6085DPN

Silicon N Channel IGBT

High Speed Power Switching

Features

• High speed switching

• Low collector to emitter saturation voltage

Outline

RENESAS Package code: PRSS0004AC-A)

(Package name: TO-220AB)

4

C

REJ03G1863-0100

Rev.1.00

Nov 09, 2009

123

1. Gate

2. Collector

G

3. Emitter

4. Collector (Flange)

E

Absolute Maximum Ratings

Item

Collector to Emitter voltage

Gate to Emitter voltage

Collector current

Collector peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. Pulse width limited by safe operating area.

2. Value at Tc = 25°C

Symbol

VCES

VGES

IC

IC(peak) Note1

PC Note2

θj-c Note2

Tj

Tstg

Ratings

600

±30

40

80

178.5

0.7

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

W

°C/W

°C

°C

REJ03G1863-0100 Rev.1.00 Nov 09, 2009

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