Q62702-A1004 View Datasheet(PDF) - Siemens AG

Part Name

Description

MFG CO.

Q62702-A1004

Silicon Schottky Diode

Siemens AG 

BAT 63

Electrical Characteristics

at TA = 25 °C, unless otherwise specified.

Parameter

Symbol

DC Characteristics

Reverse current

IR

VR = 3 V

Forward voltage

VF

IF = 1 mA

Diode capacitance

CT

VR = 0.2 V, f = 1 MHz

Case capacitance

CC

Differential resistance

R0

V = 0, f = 10 kHz

Series inductance

LS

min.

–

–

–

–

–

–

Value

Unit

typ.

max.

nA

–

10

mV

190

300

pF

0.65

0.85

pF

0.1

–

kΩ

30

–

nH

2

–

Semiconductor Group

2

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