PMPB15XP View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
PMPB15XP Datasheet PDF : 14 Pages
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NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
50
RDSon
(mΩ)
40
30
20
10
aaa-004174
VGS = -1.5 V
-1.7 V
-1.9 V
-1.6 V
-1.8 V
-2.0 V
-2.1 V
-2.5 V
-4.5 V
50
RDSon
(mΩ)
40
30
20
10
aaa-004175
Tj = 150 °C
Tj = 25 °C
0
0
-5
Tj = 25 °C
-10
-15
-20
-25
ID (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
-25
ID
(A)
-20
aaa-004176
0
0
-1
-2
-3
-4
-5
VGS (V)
ID = -8 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
1.4
aaa-004177
a
1.2
-15
1.0
-10
-5
Tj = 150 °C
Tj = 25 °C
0.8
0
0.0
-0.5
-1.0
VDS > ID × RDSon
-1.5
-2.0
VGS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.6
-60
0
60
120
180
Tj (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
PMPB15XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 November 2012
© NXP B.V. 2012. All rights reserved
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