PMPB15XP View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

MFG CO.

PMPB15XP

12 V, single P-channel Trench MOSFET

NXP Semiconductors. 

PMPB15XP

12 V, single P-channel Trench MOSFET

22 November 2012

Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

• 1.5 kV ESD protection (human body model)

• Trench MOSFET technology

• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

• Exposed drain pad for excellent thermal conduction

• Tin-plated 100 % solderable side pads for optical solder inspection

1.3 Applications

• Charging switch for portable devices

• DC-to-DC converters

• Power management in battery-driven portable devices

• Hard disk and computing power management

1.4 Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min Typ Max Unit

VDS

drain-source voltage Tj = 25 °C

-

-

-12 V

VGS

gate-source voltage

-12 -

12

V

ID

drain current

VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s

[1]

-

-

-11.8 A

Static characteristics

RDSon

drain-source on-state VGS = -4.5 V; ID = -8.2 A; Tj = 25 °C

resistance

-

15

19

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

Scan or click this QR code to view the latest information for this product

Share Link: