PMBTA42DS,165 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
PMBTA42DS,165 Datasheet PDF : 10 Pages
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NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
1000
VBE
(mV)
(1)
800
(2)
600
400
(3)
200
mld393
1000
VBEsat
(mV)
(1)
800
(2)
600
(3)
400
mld394
0
10−1
1
10
102
IC (mA)
200
10−1
1
10
102
IC (mA)
VCE = 10 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 3. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4. Base-emitter saturation voltage as a function
of collector current, typical values
103
mld395
VCEsat
(mV)
(1)
102
(2)
(3)
10
10−1
1
10
102
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values
PMBTA42DS_2
Product data sheet
Rev. 02 — 27 August 2009
© NXP B.V. 2009. All rights reserved.
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