Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC123ET
FEATURES
• Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each)
• Simplification of circuit design
• Reduces number of components and board space.
k, 4 columns
3
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
3
R1
1
R2
• Inverter circuit configurations without use of external
2
resistors.
1
2
Top view
MAM097
DESCRIPTION
NPN resistor-equipped transistor in a SOT23 plastic
package. PNP complement: PDTA123ET.
PINNING
PIN
1
2
3
DESCRIPTION
base/input
emitter/ground
collector/output
MARKING
TYPE NUMBER
PDTC123ET
MARKING CODE(1)
∗26
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter symbol.
1999 May 21
2