NTE6400 View Datasheet(PDF) - NTE Electronics

Part Name

Description

MFG CO.

NTE6400

Unijunction Transistor

NTE Electronics 

Note 1. The intristic standoff ratio, η, is essentially constant with temperature and interbase volt-

age. It is defined by the following equation:

Where

200

VP = η VBB + Tj

VP = Peak point emitter voltage

VBB = Interbase voltage

Tj = Junction Temperature (Degrees Kelvin)

Note 2. The interbase resistance is nearly ohmic and increases with temperature in a well–defined

manner. The temperature coefficient at +25°C is approximately 0.8%/°C.

.260 (6.6)

Max

.500 (12.7)

Min

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.018 (0.45) Dia

.210 (5.33) Dia Max

B2

B1

45°

.031 (.793)

Emitter

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