NTB90N02 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
NTB90N02 Datasheet PDF : 8 Pages
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NTB90N02, NTP90N02
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = $ 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 90 Adc)
(VGS = 4.5 Vdc, ID = 40 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 20 Adc)
Forward Transconductance (Note 3) (VDS = 15 Vdc, ID = 10 Adc)
DYNAMIC CHARACTERISTICS
RDS(on)
gFS
Input Capacitance
Output Capacitance
(VDS = 20 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VDD = 20 Vdc, ID = 20 Adc,
VGS = 4.5 Vdc, RG = 2.5 W)
(VDS = 20 Vdc, ID = 20 Adc,
VGS = 4.5 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
QT
Q1
Q2
Forward On−Voltage
Reverse Recovery Time
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 40 Adc, VGS = 0 Vdc) (Note 3)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 150°C)
(IS = 2.3 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
VSD
trr
ta
tb
QRR
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
Typ
Max
Unit
24
27
−
25
Vdc
−
−
mV/°C
mAdc
−
−
1.0
−
−
10
−
−
±100
nAdc
Vdc
1.0
1.9
3.0
−
−3.8
−
mV/°C
mW
−
5.0
5.8
−
7.5
9.0
−
5.0
5.8
−
7.5
9.0
−
25
−
mhos
−
2120
−
pF
−
900
−
−
360
−
−
16
−
ns
−
90
−
−
28
−
−
60
−
−
29
−
nC
−
8.0
−
−
20
−
−
0.75
1.0
Vdc
−
1.2
−
−
0.65
−
−
40
−
ns
−
21
−
−
18
−
−
0.036
−
mC
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